The bonding strength equivalent to the substrate can be obtained through the normal temperature (room temperature) process. Bonding does not produce thermal strain or thermal stress, the equipment quality is stable, and it is easy to cope with miniaturization. No heating and cooling time is required, and high throughput is achieved. A wide range of bonding materials can be selected. Silicon-based materials, metal materials, compound semiconductor materials, optical materials, and oxide single crystal materials can be bonded, and different materials can be bonded. Used in the production of MEMS。